2N5551 Transistor

The 2N5551 is an NPN bipolar junction transistor (BJT) designed for general-purpose applications, including amplification and switching. It offers high voltage capabilities and high current handling, making it suitable for a wide range of electronic circuits, from audio amplifiers to power management systems.

Key Features:

• Type: NPN Bipolar Junction Transistor (BJT)
• High Voltage Rating: Capable of withstanding high voltage levels
• High Current Capability: Suitable for medium to high current applications
• High Gain: Provides effective amplification for various signals
• Compact Package: Available in a TO-92 package for easy integration

Technical Specifications:

• Collector-Emitter Voltage (Vce): 60V
• Collector-Base Voltage (Vcb): 60V
• Emitter-Base Voltage (Veb): 6V
• Collector Current (Ic): 15A
• Power Dissipation (Ptot): 1W
• DC Current Gain (hFE): 50 to 400
• Transition Frequency (ft): 100MHz
• Package Type: TO-92

Applications:

• Signal Amplification: Ideal for amplifying audio and low-frequency signals
• Switching: Suitable for switching applications in various electronic circuits
• Power Amplification: Used in power amplifiers and related circuits
• Power Management: Effective in power management and regulation systems
• General Purpose: Versatile for various general-purpose electronic applications

Usage:

1. Circuit Design: Integrate the 2N5551 transistor into your circuit according to the desired application.
2. Biasing: Properly bias the transistor to ensure optimal performance in amplification or switching.
3. Connection: Connect the collector, base, and emitter terminals correctly in your circuit.
4. Testing: Test the circuit to ensure the transistor operates as intended.

Caution:

• Voltage and Current Limits: Adhere to the maximum voltage and current ratings to prevent damage.
• Heat Dissipation: Ensure adequate heat management to avoid overheating, especially in high-current applications.
• Static Electricity: Handle with care to prevent damage from electrostatic discharge (ESD).

Datasheet:
For detailed technical specifications, refer to the 2N5551 Transistor Datasheet.