2N5401 Transistor

The 2N5401 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is capable of handling medium power levels and features a high voltage rating, making it suitable for a variety of electronic circuits, including audio amplifiers, signal processing, and power management.

Key Features:

• Type: PNP Bipolar Junction Transistor (BJT)
• High Voltage: Capable of withstanding high voltage levels
• Medium Power Handling: Suitable for medium power applications
• Good Frequency Response: Effective for amplification and signal processing
• Compact Package: Available in a TO-92 package for easy integration

Technical Specifications:

• Collector-Emitter Voltage (Vce): -150V
• Collector-Base Voltage (Vcb): -160V
• Emitter-Base Voltage (Veb): -5V
• Collector Current (Ic): -600mA
• Power Dissipation (Ptot): 625mW
• DC Current Gain (hFE): 30 to 240
• Transition Frequency (ft): 50MHz
• Package Type: TO-92

Applications:

• Signal Amplification: Used in medium-power amplification circuits
• Switching Applications: Suitable for medium-power switching applications
• Audio Frequency Circuits: Ideal for audio amplification and signal processing
• Power Management: Used in power management and regulation circuits
• General Purpose: Commonly used in various general-purpose electronic circuits

Usage:

1. Circuit Design: Integrate the 2N5401 transistor into your circuit design based on the required application.
2. Biasing: Properly bias the transistor for optimal performance in amplification or switching.
3. Connection: Connect the collector, base, and emitter terminals appropriately in the circuit.
4. Testing: Test the circuit to ensure the transistor is functioning as expected in the desired application.

Caution:

• Voltage and Current Limits: Do not exceed the maximum voltage and current ratings to prevent damage.
• Heat Dissipation: Ensure adequate heat dissipation to avoid overheating, especially in medium-power applications.
• Static Electricity: Handle with care to avoid damage from electrostatic discharge (ESD).

Datasheet:
For detailed technical specifications, refer to the 2N5401 Transistor Datasheet.