5N60 FET

This is an isc N-Channel MOSFET Transistor INCHANG E Semiconductor 5N60 with Drain Current ID= 5A @ TC=25℃, Drain Source Voltage: VDSS= 600V ·

Also, has Fast Switching Speed , Minimum Lot-to-Lot variations for robust device performance and reliable operation

Features and Specifications

• Type Designator: 5N60
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 100 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Drain Current |Id|: 5 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 42 nS
• Drain-Source Capacitance (Cd): 55 pF
• Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Applications

• AC Adapter
• Battery Charge
• SMPS