2N3055 is a general-purpose power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.
Technical Specification
Medium power transistor
Excellent safe operating area
Complementary NPN – PNP transistors
Low collector-emitter saturation voltage
Pb−free packages are available
DC current gain (hFE) up to 70
With hFe improved linearity
Maximum voltage across collector and emitter: 60V DC
Maximum current allowed trough collector: 15A DC
Maximum voltage across base and emitter: 7V DC
Maximum current allowed through base: 7A DC
Maximum voltage across collector and base: 100V DC
Operating temperature range: -65ºC to +200ºC
Total power dissipation: 115W
Pinout
Base: Pin 1
Emitter: Pin 2
Collector: TAB
Application
Transistor are designed for high switching applications and feature current gain over a wide range of collector current and low leakage current.
Linear amplification and switching.