2N2222 Transistor

This is the 2N2222A, an NPN silicon BJT (Bipolar Junction Transistor), this transistor can help in your project by being used to help drive large loads or amplifying or switching applications.

Technical Specification

Polarity: NPN

Power Dissipation: 0.5W

Collector-Base Voltage: 60V

Collector-Emitter Voltage: 30V

Emitter-Base Voltage: 5V

Collector Current: 0.8A

Collector-Emitter Saturation Voltage: 0.4V

Operating Junction Temperature: 175˚C

Collector Capacitance: 8pF

Pinout

Pin 1: Emitter

Pin 2: Base

Pin 3: Collector

Application

Transistor are designed for high switching applications and feature current gain over a wide range of collector current and low leakage current.

Linear amplification and switching.