2N2905A temperature sensitive sensor

This is the 2N2905A, an PNP silicon BJT (Bipolar Junction Transistor), this transistor can help in your project by being used to help drive large loads or amplifying or switching applications.

Technical Specification

Polarity: PNP

Power Dissipation: 0.6W

Collector-Base Voltage: 60V

Collector-Emitter Voltage: 60V

Emitter-Base Voltage: 5V

Collector Current: 0.6A

Collector Peak Current: 0.8A

Dc Current Gain: 300

Collector-Emitter Saturation Voltage: 0.4V

Operating Junction Temperature: 175˚C

Collector Capacitance: 8pF

Pinout

Pin 1: Base

Pin 2: Collector

Pin 3: Emitter

Application

Transistor are designed for high switching applications and feature current gain over a wide range of collector current and low leakage current. It is used in Military applications.