VBPW77NA phototransistor sensor

The VBPW77NA Phototransistor Sensor is a high-performance photodetector designed for applications requiring reliable light sensing and detection. This sensor is ideal for use in light control systems, optical encoders, and various other light-sensing applications. With its high sensitivity and compact design, it provides accurate and consistent performance.

Key Features:

• High sensitivity to light
• Fast response time
• Compact and robust design
• Easy to integrate into various applications
• Reliable performance over a wide range of temperatures

Technical Specifications:

• Sensor Type: Phototransistor
• Wavelength Sensitivity: 850 nm
• Collector-Emitter Voltage (VCEO): 70V
• Emitter-Collector Voltage (VECO): 5V
• Collector Current (IC): 50 mA
• Dark Current (ID): 100 nA
• Response Time: < 10 µs
• Package Type: T-1 (3mm)
• Operating Temperature: -40°C to +85°C

Applications:

• Light control systems
• Optical encoders
• IR remote control
• Photo-interrupters
• Industrial automation
• Position sensing

Usage:

1. Integration: Integrate the VBPW77NA sensor into your circuit design.
2. Power Supply: Connect to an appropriate power supply within the specified voltage range.
3. Calibration: Adjust the sensor placement and circuit parameters for optimal performance.
4. Testing: Test the sensor in its application environment to ensure accurate light detection and response.

Caution:

• Handle with care to prevent damage from static discharge.
• Ensure proper orientation and alignment in the circuit for optimal performance.
• Avoid exposure to excessive light levels to prevent saturation.

Datasheet: For more detailed technical information, refer to the VBPW77NA Phototransistor Sensor Datasheet.