TIP35C NPN 100V/25A Transistor

The TIP35C is a high-power NPN bipolar junction transistor (BJT) designed for applications requiring high current and voltage handling capabilities. This transistor is commonly used in power amplification, switching, and linear applications due to its robustness and reliability. The TIP35C can handle a maximum collector current of 25A and a maximum collector-emitter voltage of 100V, making it suitable for various high-power applications.

Key Features:

• Transistor Type: NPN
• Collector-Emitter Voltage (Vce): 100V
• Collector Current (Ic): 25A
• Power Dissipation (Ptot): 125W
• DC Current Gain (hFE): 15 to 75 at Ic = 15A
• Package Type: TO-247

Technical Specifications:

• Collector-Base Voltage (Vcb): 100V
• Emitter-Base Voltage (Veb): 5V
• Collector-Emitter Saturation Voltage (Vce(sat)): 4V (maximum) at Ic = 15A
• Base-Emitter Saturation Voltage (Vbe(sat)): 2.8V (maximum) at Ic = 15A
• Operating Temperature Range: -65°C to +150°C
• Storage Temperature Range: -65°C to +150°C
• Package Type: TO-247
• Thermal Resistance (Junction to Case): 1.25°C/W

Applications:

• Power Amplification: Used in audio and RF power amplifiers.
• Switching Applications: Suitable for high-current switching applications in power supplies and motor control circuits.
• Linear Applications: Ideal for use in linear regulators and other high-power linear applications.
• Industrial Equipment: Commonly used in industrial control systems requiring high power handling capabilities.
• Consumer Electronics: Used in high-power consumer electronics such as audio equipment and power supplies.

Datasheet:
For detailed technical information, refer to the TIP35C Transistor Datasheet.