STP65NF06

The STP65NF06 is an N-channel MOSFET designed for high efficiency and fast switching applications. It is well-suited for a wide range of applications due to its low gate charge, low on-resistance, and high current handling capabilities.

Key Features:

• N-channel enhancement mode MOSFET
• Low gate charge (Qg)
• Low on-resistance (Rds(on)): 0.014 ohms (max) at Vgs = 10V
• High current capability: 60A (continuous)
• High avalanche ruggedness
• Fast switching

Technical Specifications:

• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 60A
• Pulsed Drain Current (Id, pulse): 240A
• Gate-Source Voltage (Vgs): ±20V
• Total Gate Charge (Qg): 70nC (typical)
• Gate Threshold Voltage (Vgs(th)): 2-4V
• Power Dissipation (Pd): 110W
• Operating Temperature Range: -55°C to 175°C

Applications:

• DC-DC converters
• Motor control
• Power management in portable and battery-operated devices
• Switch-mode power supplies (SMPS)
• Load switch applications

Datasheet:
For detailed technical specifications, refer to the STP65NF06 Datasheet.