STP55NF06 FET

Description: The STP55NF06 is an N-channel power MOSFET designed for high current, high speed switching applications. It is widely used in power management, motor control, and DC-DC converters. With its low on-resistance and fast switching capabilities, the STP55NF06 ensures efficient performance in various electronic circuits. The TO-220 package provides excellent thermal performance and ease of mounting.

Key Features:

• N-channel enhancement mode power MOSFET
• Low on-resistance for high efficiency
• High current handling capability
• Fast switching speed
• Rugged and reliable design
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 60V
• Continuous Drain Current (I_D): 50A
• Pulsed Drain Current (I_DM): 220A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.018Ω (max) at V_GS = 10V, I_D = 27.5A
• Total Gate Charge (Q_g): 67nC (typical)
• Rise Time (t_r): 55ns
• Fall Time (t_f): 45ns
• Package Type: TO-220

Applications:

• Power management
• Motor control
• DC-DC converters
• Load switching
• Battery protection

Datasheet: For detailed technical information, refer to the STP55NF06 FET Datasheet.