S8550 Transistor

The S8550 is a PNP bipolar junction transistor (BJT) designed for general-purpose low-power switching and amplification. Known for its high current gain and low noise, the S8550 is suitable for various electronic applications, including signal processing, low-power amplification, and switching circuits.

Key Features:

• Type: PNP Bipolar Junction Transistor (BJT)
• High Gain: Provides high current gain (hFE) for effective signal amplification
• Low Noise: Suitable for low-noise applications
• Compact Package: Available in a TO-92 package, ideal for space-constrained designs

Technical Specifications:

• Collector-Emitter Voltage (Vce): -25V
• Collector-Base Voltage (Vcb): -40V
• Emitter-Base Voltage (Veb): -5V
• Collector Current (Ic): -700mA
• Power Dissipation (Ptot): 625mW
• DC Current Gain (hFE): 85 to 300
• Transition Frequency (ft): 100MHz
• Package Type: TO-92

Applications:

• Signal Amplification: Ideal for low-power amplification circuits
• Switching: Suitable for general-purpose switching applications
• Audio Circuits: Effective in audio signal processing and low-power amplification
• General Purpose: Versatile for various electronic applications and projects

Usage:

1. Circuit Design: Integrate the S8550 transistor into your circuit based on your specific application requirements.
2. Biasing: Properly bias the transistor to ensure optimal performance for amplification or switching.
3. Connection: Connect the collector, base, and emitter terminals as per your circuit design.
4. Testing: Verify the transistor’s operation in your circuit to ensure it functions correctly.

Caution:

• Voltage and Current Ratings: Adhere to the maximum voltage and current ratings to prevent damage.
• Heat Management: Ensure adequate heat dissipation to avoid overheating, especially in high-current applications.
• Static Electricity: Handle with care to avoid damage from electrostatic discharge (ESD).

Datasheet:
For detailed technical specifications, refer to the S8550 Transistor Datasheet.