MJE172 Power transistor

The MJE172 is a PNP silicon power transistor designed for high-voltage, high-current applications. It is commonly used in linear and switching applications, including power amplifiers, voltage regulators, and motor drivers. The MJE172 is known for its robust performance, high gain, and reliability, making it suitable for both industrial and consumer electronic applications.

Key Features:

• PNP power transistor
• High voltage rating
• High current capability
• High DC current gain
• Low saturation voltage
• Durable and robust design

Technical Specifications:

• Collector-Emitter Voltage (VCEO): -80V
• Collector-Base Voltage (VCBO): -100V
• Emitter-Base Voltage (VEBO): -5V
• Continuous Collector Current (IC): -3A
• Peak Collector Current (ICM): -8A
• Base Current (IB): -0.6A
• Collector Dissipation (PC): 30W
• DC Current Gain (hFE): 20-100 (at IC = -1A, VCE = -4V)
• Transition Frequency (fT): 50 MHz
• Saturation Voltage (VCE(sat)): -0.3V (max)
• Package: TO-126
• Operating Temperature Range: -65°C to +150°C

Applications:

• Power Amplifiers: Suitable for use in audio and RF power amplification circuits.
• Voltage Regulators: Ideal for regulating voltage in various power supply circuits.
• Motor Drivers: Used in driving and controlling motors in industrial and consumer applications.
• Switching Applications: Efficient switching in power conversion and control circuits.
• Industrial Equipment: High-current switching in industrial electronic systems.
• Consumer Electronics: Power management in household electronic devices.

Datasheet:
For detailed technical information, refer to the MJE172 Datasheet.