IRLB8721

The IRLB8721 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching and amplification applications. It features low on-resistance and high-speed switching capabilities, making it suitable for use in power electronics, motor control, and high-current applications. Its low gate threshold voltage allows for easy interfacing with low-voltage control signals, enhancing its versatility in various electronic designs.

Key Features:

• Low on-resistance for efficient power switching
• High-speed switching capability
• Low gate threshold voltage for easy drive
• High current handling capacity
• Suitable for both switching and linear applications
• Enhanced thermal performance for reliable operation

Technical Specifications:

• Type: N-channel MOSFET
• Drain-Source Voltage (Vds): 30V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): 62A (at Vgs = 10V)
• Pulsed Drain Current (Id,pulse): 120A
• On-Resistance (Rds(on)): 0.014Ω (at Vgs = 10V)
• Gate Threshold Voltage (Vgs(th)): 1.0V to 2.5V
• Total Gate Charge (Qg): 31nC (typical)
• Package Type: TO-220

Applications:

• Power switching in DC-DC converters
• Motor and relay drivers
• High-current switching applications
• Audio amplifiers
• LED drivers
• Power management circuits

Usage:

1. Connect the gate of the IRLB8721 to a suitable control signal through a gate resistor.
2. Connect the drain to the load and the source to ground.
3. Ensure that the voltage and current ratings of the MOSFET are not exceeded in your application.
4. Use proper heatsinking to manage thermal performance and avoid overheating.

Caution:

• Handle with care to avoid damage from static electricity.
• Verify that the gate drive voltage is adequate to fully turn on the MOSFET.
• Ensure proper cooling and heatsinking for high-current applications.

Datasheet:
For detailed technical specifications, refer to the IRLB8721 Datasheet.