IRFZ34N

Description: The IRFZ34N is an N-channel power MOSFET designed for high-speed switching applications in power supplies, motor controls, and other electronic circuits. It features low on-resistance and high current handling capability, making it suitable for applications where efficiency and reliability are crucial. The MOSFET is housed in a TO-220 package, providing effective heat dissipation and robust performance.

Key Features:

• N-channel power MOSFET
• Low on-resistance for efficient switching
• High current handling capability
• Fast switching speed
• Robust and reliable performance
• TO-220 package for effective heat dissipation
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 55V
• Continuous Drain Current (I_D): 30A
• Pulsed Drain Current (I_DM): 120A
• Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): 88W
• On-Resistance (R_DS(on)): 0.022Ω (at V_GS = 10V, I_D = 16A)
• Gate Charge (Q_g): 74nC (typical)
• Input Capacitance (C_iss): 2300pF (typical)
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-220

Applications:

• Switching power supplies
• Motor controls
• DC-DC converters
• Battery-powered applications
• Load switching
• Inverters

Datasheet: For detailed technical information, refer to the IRFZ34N N-Channel Power MOSFET Datasheet.