IRFU024N FET

Description: The IRFU024N is an N-channel power MOSFET designed for high-speed switching applications in power supplies, DC-DC converters, and motor control circuits. It offers low on-resistance and high-speed switching performance, making it suitable for applications requiring efficient power management and reliable operation. The MOSFET is housed in a TO-251 package, providing good thermal dissipation characteristics and ease of mounting.

Key Features:

• N-channel enhancement mode power MOSFET
• Low on-resistance for high efficiency
• Fast switching speed
• Rugged and reliable design
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 55V
• Continuous Drain Current (I_D): 17A (at 25°C)
• Pulsed Drain Current (I_DM): 68A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.095Ω (max) at V_GS = 10V, I_D = 17A
• Total Gate Charge (Q_g): 57nC (typical)
• Gate Charge at 10V (Q_gs): 14nC (typical)
• Package Type: TO-251 (D-Pak)

Applications:

• Power supplies
• DC-DC converters
• Motor control
• Switching regulators
• Solenoid and relay drivers

Datasheet: For detailed technical information, refer to the IRFU024N N-Channel MOSFET Datasheet.