IRFP250M MOSFET

Description: The IRFP250M is an N-channel power MOSFET designed for high-speed switching applications. It features low on-state resistance and high switching speed, making it ideal for use in power supplies, motor control, and other electronic switching circuits requiring efficient and reliable performance.

Key Features:

• N-channel enhancement mode MOSFET
• Low on-state resistance (R_DS(on))
• High-speed switching capability
• Low gate charge
• High current handling capability

Technical Specifications:

• Drain-Source Voltage (V_DS): 200V
• Continuous Drain Current (I_D): 30A
• Pulsed Drain Current (I_DM): 120A
• Gate-Source Voltage (V_GS): ±20V
• On-State Resistance (R_DS(on)): 0.055 ohms (max) at V_GS = 10V, I_D = 15A
• Total Gate Charge (Q_G): 190nC (typical)
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-247AC

Applications:

• Switching power supplies
• Motor control
• DC-DC converters
• Inverters
• Class D amplifiers

Datasheet: For detailed technical information, refer to the IRFP250M datasheet.