IRFBC30 600V 3.6A

Description: The IRFBC30 is an N-channel power MOSFET designed for high-voltage applications requiring efficient switching and robust performance. It is suitable for use in power supplies, motor controls, inverters, and other electronic circuits where high voltage handling and low on-resistance are essential. The MOSFET is housed in a TO-220 package, providing effective heat dissipation and reliability under various operating conditions.

Key Features:

• N-channel power MOSFET
• Low on-resistance for efficient power switching
• High voltage handling capability
• Fast switching speed
• Robust and reliable performance
• TO-220 package for effective thermal management
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 600V
• Continuous Drain Current (I_D): 3.6A
• Pulsed Drain Current (I_DM): 14A
• Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): 88W
• On-Resistance (R_DS(on)): 2.0Ω (at V_GS = 10V, I_D = 1.8A)
• Gate Charge (Q_g): 31nC (typical)
• Input Capacitance (C_iss): 330pF (typical)
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-220

Applications:

• Power supplies
• Motor controls
• Inverters
• Switching regulators
• Industrial and automotive electronics

Datasheet: For detailed technical information, refer to the IRFBC30 N-Channel Power MOSFET Datasheet.