IRFB4310

Description: The IRFB4310 is an N-channel power MOSFET designed for high-power switching applications where efficiency and robust performance are critical. It is suitable for use in power supplies, motor controls, inverters, and other electronic circuits requiring high current handling and low on-resistance. The MOSFET is housed in a TO-220 package, which allows for effective heat dissipation and reliable operation under various conditions.

Key Features:

• N-channel power MOSFET
• Low on-resistance for efficient power switching
• High current handling capability
• Fast switching speed
• Enhanced thermal performance with TO-220 package
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 100V
• Continuous Drain Current (I_D): 150A
• Pulsed Drain Current (I_DM): 600A
• Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): 200W
• On-Resistance (R_DS(on)): 4.0mΩ (at V_GS = 10V, I_D = 75A)
• Gate Charge (Q_g): 310nC (typical)
• Input Capacitance (C_iss): 6010pF (typical)
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-220

Applications:

• Power supplies
• Motor controls
• DC-DC converters
• Inverters
• Switching regulators
• Automotive and industrial applications

Datasheet: For detailed technical information, refer to the IRFB4310 N-Channel Power MOSFET Datasheet.