IRFB4229 MOSFET

Description: The IRFB4229 is an N-channel power MOSFET designed for high efficiency and fast switching in a variety of power management applications. This MOSFET features low on-resistance, high current handling capability, and excellent thermal performance, making it ideal for use in power supplies, motor control circuits, and DC-DC converters. Its rugged design ensures reliability and longevity in demanding environments.

Key Features:

• N-channel enhancement mode power MOSFET
• Low on-resistance for high efficiency
• High current handling capability
• Fast switching speed
• Rugged and reliable design
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 150V
• Continuous Drain Current (I_D): 120A (at 25°C)
• Pulsed Drain Current (I_DM): 480A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.0044Ω (max) at V_GS = 10V
• Total Gate Charge (Q_g): 190nC (typical)
• Rise Time (t_r): 80ns
• Fall Time (t_f): 45ns
• Package Type: TO-220

Applications:

• Power supplies
• Motor control
• DC-DC converters
• Load switching
• Battery protection

Datasheet: For detailed technical information, refer to the IRFB4229 MOSFET Datasheet.