IRF9630 200V 6.5A

The IRF9630 is a P-channel power MOSFET designed for high-voltage applications. It offers efficient switching with its high voltage rating and moderate current capability, making it suitable for use in power supplies, motor control circuits, and other high-power electronic systems.

Key Features:

• P-channel enhancement mode MOSFET
• High voltage rating: 200V
• Moderate current rating: 6.5A
• Low on-resistance for efficient switching
• Fast switching capabilities
• Rugged and reliable construction
• Suitable for high-frequency and high-power applications

Technical Specifications:

• Type: P-channel MOSFET
• Drain-Source Voltage (Vds): -200V
• Continuous Drain Current (Id): -6.5A
• Pulsed Drain Current (Id, Pulse): -26A
• Gate-Source Voltage (Vgs): ±20V
• Rds(on): 1.200Ω (maximum) at Vgs = -10V
• Total Gate Charge (Qg): 85nC (typical)
• Gate-Source Threshold Voltage (Vgs(th)): -2.0V to -4.0V
• Power Dissipation (Pd): 75W
• Operating Temperature Range: -55°C to +150°C
• Package Type: TO-220

Applications:

• Switched-mode power supplies (SMPS)
• Motor control circuits
• DC-DC converters
• Inverters and amplifiers
• Load switches
• Automotive electronics
• Power management systems

Usage:

1. Connect the drain terminal to the high-side load or power supply.
2. Connect the source terminal to the low-side or ground of the circuit.
3. Apply a suitable gate voltage (Vgs) to control the switching operation.
4. Use a gate resistor if needed to control the switching speed and reduce noise.
5. Ensure proper heat sinking to handle power dissipation and prevent overheating.

Caution:

• Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD).
• Verify the voltage and current ratings to ensure compatibility with your circuit.
• Ensure adequate cooling and heat dissipation to prevent thermal overload.

Datasheet:
For detailed technical specifications, refer to the IRF9630 Datasheet.