IRF9510 P Channel FET

Description: The IRF9510 is a P-channel enhancement-mode MOSFET designed for efficient power management in a variety of applications. It is particularly suited for battery-operated circuits and other applications where low power consumption and fast switching speeds are essential. The MOSFET offers low on-resistance and can handle moderate currents with minimal gate voltage.

Key Features:

• P-channel enhancement-mode power MOSFET
• Low on-resistance for high efficiency
• Fast switching speed
• Low gate drive voltage
• High current handling capability
• Rugged and reliable design
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): -100V
• Continuous Drain Current (I_D): -4.5A
• Pulsed Drain Current (I_DM): -18A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 1.2Ω (max) at V_GS = -10V, I_D = -2.8A
• Total Gate Charge (Q_g): 30nC (typical)
• Gate Charge at 10V (Q_gs): 7nC (typical)
• Package Type: TO-220

Applications:

• Power management in battery-operated devices
• DC-DC converters
• Switching regulators
• Motor control circuits
• Audio amplifiers

Datasheet: For detailed technical information, refer to the IRF9510 P-Channel MOSFET datasheet.