IRF7832 SOP8

The IRF7832 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features very low on-resistance and high-speed switching capability. This MOSFET is packaged in an industry-standard SOP8 package, making it ideal for use in space-constrained applications.

Key Features:

• Dual N-channel MOSFET
• Low on-resistance (Rds(on)): 9.5mΩ @ 4.5V
• High-speed switching
• Low gate charge
• Rugged and reliable

Technical Specifications:

• Drain-to-Source Voltage (Vds): 30V
• Gate-to-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): 10A
• Pulsed Drain Current (Id, pulse): 60A
• Total Gate Charge (Qg): 18nC @ 4.5V
• Power Dissipation (Pd): 2W
• Operating Temperature Range: -55°C to +150°C
• Package: SOP8

Applications:

• DC-DC converters
• Power management in portable devices
• Load switches
• Motor control
• Battery management

Datasheet:
For detailed technical information, please refer to the IRF7832 Datasheet.