IRF730 N channel FET

Description: The IRF730 is an N-channel power MOSFET designed for high-speed switching and power amplification applications. It features a low on-resistance and high switching speed, making it suitable for use in switching regulators, motor control, and DC-DC converters. The MOSFET is housed in a TO-220 package, which provides good thermal performance and ease of mounting.

Key Features:

• N-channel enhancement mode power MOSFET
• Low on-resistance for high efficiency
• High-speed switching capability
• Rugged and reliable design
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 400V
• Continuous Drain Current (I_D): 5.5A (at 25°C)
• Pulsed Drain Current (I_DM): 22A
• Gate-Source Voltage (V_GS): ±22V

Applications:

• Switching regulators
• Motor control
• DC-DC converters
• Power amplifiers
• Solenoid and relay drivers

Datasheet: For detailed technical information, refer to the IRF730 N-Channel MOSFET Datasheet.