IRF640 200V 18A

The IRF640 is an N-channel power MOSFET designed for high-voltage and high-current applications. It offers efficient switching and low on-resistance, making it ideal for use in power supplies, motor control circuits, and various high-power electronic applications.

Key Features:

• N-channel enhancement mode MOSFET
• High voltage rating: 200V
• High current rating: 18A
• Low on-resistance for efficient switching
• Fast switching capabilities
• Rugged and reliable construction
• Suitable for high-frequency applications

Technical Specifications:

• Type: N-channel MOSFET
• Drain-Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 18A
• Pulsed Drain Current (Id, Pulse): 72A
• Gate-Source Voltage (Vgs): ±20V
• Rds(on): 0.180Ω (maximum) at Vgs = 10V
• Total Gate Charge (Qg): 67nC (typical)
• Gate-Source Threshold Voltage (Vgs(th)): 2.0V – 4.0V
• Power Dissipation (Pd): 125W
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-220

Applications:

• Switched-mode power supplies (SMPS)
• Motor control circuits
• DC-DC converters
• Inverters and amplifiers
• Load switches
• Automotive electronics
• Power management systems

Usage:

1. Connect the drain terminal to the load or power supply.
2. Connect the source terminal to the ground or low-side of the circuit.
3. Apply a suitable gate voltage (Vgs) to control the switching operation.
4. Use a gate resistor if needed to manage switching speed and reduce noise.
5. Ensure proper heat sinking to handle power dissipation and prevent overheating.

Caution:

• Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD).
• Verify the voltage and current ratings to ensure compatibility with your circuit.
• Ensure adequate cooling and heat dissipation to prevent thermal overload.

Datasheet:
For detailed technical specifications, refer to the IRF640 Datasheet.