IRF5851 TSOP6

The IRF5851 is an N-channel MOSFET designed for high-efficiency power management applications. This MOSFET features low on-resistance and fast switching capabilities, making it ideal for a wide range of power conversion and management applications. It is packaged in a compact TSOP6 package, which is suitable for space-constrained designs.

Key Features:

• N-channel MOSFET
• Low on-resistance (Rds(on)): 60mΩ @ 4.5V
• Fast switching speed
• Low gate charge
• High efficiency
• Compact TSOP6 package

Technical Specifications:

• Drain-to-Source Voltage (Vds): 30V
• Gate-to-Source Voltage (Vgs): ±12V
• Continuous Drain Current (Id): 5.3A
• Pulsed Drain Current (Id, pulse): 42A
• Total Gate Charge (Qg): 8.3nC @ 4.5V
• Power Dissipation (Pd): 1.25W
• Operating Temperature Range: -55°C to +150°C
• Package: TSOP6

Applications:

• DC-DC converters
• Power management in portable devices
• Load switches
• Motor control
• Battery management
• Switching regulators

Datasheet:
For detailed technical information, please refer to the IRF5851 Datasheet.