IRF5305 55V 31A

The IRF5305 is a P-channel power MOSFET designed for high-current, low-voltage applications. It offers efficient switching with low on-resistance and is ideal for power supply circuits, motor control, and other high-power electronic applications.

Key Features:

• P-channel enhancement mode MOSFET
• High current rating: 31A
• Low on-resistance for efficient switching
• Voltage rating: 55V
• Fast switching capabilities
• Rugged and reliable construction
• Suitable for high-frequency applications

Technical Specifications:

• Type: P-channel MOSFET
• Drain-Source Voltage (Vds): -55V
• Continuous Drain Current (Id): -31A
• Pulsed Drain Current (Id, Pulse): -110A
• Gate-Source Voltage (Vgs): ±20V
• Rds(on): 0.050Ω (maximum) at Vgs = -10V
• Total Gate Charge (Qg): 140nC (typical)
• Gate-Source Threshold Voltage (Vgs(th)): -2.0V to -4.0V
• Power Dissipation (Pd): 94W
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-220

Applications:

• Power supplies (SMPS)
• Motor control circuits
• DC-DC converters
• Inverters and amplifiers
• Load switches
• Automotive electronics
• Power management systems

Usage:

1. Connect the drain terminal to the high-side load or power supply.
2. Connect the source terminal to the low-side or ground of the circuit.
3. Apply a suitable gate voltage (Vgs) to control the switching operation.
4. Use a gate resistor if needed to manage switching speed and reduce noise.
5. Ensure proper heat sinking to handle power dissipation and prevent overheating.

Caution:

• Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD).
• Verify the voltage and current ratings to ensure compatibility with your circuit.
• Ensure adequate cooling and heat dissipation to prevent thermal overload.

Datasheet:
For detailed technical specifications, refer to the IRF5305 Datasheet.