IRF520N

Description: The IRF520N is an N-channel enhancement mode power MOSFET designed for high-speed switching and efficient power management. It is widely used in various electronic circuits, including power supplies, motor drivers, and switching regulators. The IRF520N offers low on-resistance and high current handling capabilities, making it suitable for applications requiring efficient and reliable power switching.

Key Features:

• N-channel enhancement mode MOSFET
• Low on-resistance for efficient power switching
• High current handling capability
• Fast switching speed
• Robust and reliable performance
• Available in a TO-220 package for effective heat dissipation
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DSS): 100V
• Continuous Drain Current (I_D): 9.2A
• Pulsed Drain Current (I_DM): 33A
• Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): 40W
• On-Resistance (R_DS(on)): 0.27Ω (at V_GS = 10V, I_D = 5.2A)
• Gate Charge (Q_g): 26nC (typical)
• Input Capacitance (C_iss): 620pF (typical)
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-220

Applications:

• Switching power supplies
• Motor control and drivers
• DC-DC converters
• Battery-powered applications
• Load switching
• Inverters

Datasheet: For detailed technical information, refer to the  IRF520N N-Channel Power MOSFET Datasheet.