Brand New IRF3205 55V 110A

The IRF3205 is a high-performance N-channel MOSFET designed for applications requiring high current and low on-resistance. It is ideal for power switching and amplification in a variety of high-power electronic circuits, including power supplies and motor control systems.

Key Features:

• N-channel enhancement mode MOSFET
• High current rating: 110A
• Low on-resistance for efficient switching
• High voltage rating: 55V
• Fast switching speed
• Robust construction for reliable performance
• Suitable for high-frequency applications

Technical Specifications:

• Type: N-channel MOSFET
• Drain-Source Voltage (Vds): 55V
• Continuous Drain Current (Id): 110A
• Pulsed Drain Current (Id, Pulse): 220A
• Gate-Source Voltage (Vgs): ±20V
• Rds(on): 0.015Ω (maximum) at Vgs = 10V
• Total Gate Charge (Qg): 240nC (typical)
• Gate-Source Threshold Voltage (Vgs(th)): 2.0V – 4.0V
• Power Dissipation (Pd): 94W
• Operating Temperature Range: -55°C to +175°C
• Package Type: TO-220

Applications:

• Power supplies (SMPS)
• Motor control circuits
• DC-DC converters
• Inverters and amplifiers
• Load switches
• Power management systems
• Automotive electronics

Usage:

1. Connect the drain terminal to the high-voltage load.
2. Connect the source terminal to the ground or low-side of the circuit.
3. Apply a suitable gate voltage (Vgs) to control the switching operation.
4. Use a gate resistor if needed to manage switching speed and reduce noise.
5. Ensure proper heat sinking to handle power dissipation and prevent overheating.

Caution:

• Handle the MOSFET with care to avoid damage from electrostatic discharge (ESD).
• Verify the voltage and current ratings to ensure compatibility with your circuit.
• Ensure adequate cooling and heat dissipation to prevent thermal overload.

Datasheet:
For detailed technical specifications, refer to the IRF3205 Datasheet.