IR2110

The IR2110 is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration, which operates up to 500V.

Key Features:

• Floating channel designed for bootstrap operation
• Fully operational to +500V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10V to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
• Separate logic supply range from 3.3V to 20V
• Logic and power ground ±5V offset
• Lower di/dt gate driver for better noise immunity
• Output in phase with input

Technical Specifications:

• High Side Floating Supply Voltage: 10V to 20V
• Low Side and Logic Fixed Supply Voltage: 10V to 20V
• Offset Voltage: 500V max
• Output Current (Peak): 2A
• Turn-On Propagation Delay: 120ns typ
• Turn-Off Propagation Delay: 94ns typ
• Operating Temperature Range: -40°C to +125°C
• Package: DIP-14 and SOIC-16

Applications:

• Motor drive
• Inverters
• SMPS (Switched Mode Power Supplies)
• Induction heating
• Industrial applications

Datasheet:
For detailed technical information, please refer to the IR2110 Datasheet.