IR2103PBF

The IR2103PBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive high-side and low-side N-channel power MOSFETs or IGBTs in a half-bridge configuration. The device features a floating channel designed for bootstrap operation, allowing it to drive the high-side switch up to 600V.

Key Features:

• Gate drive supply range from 10V to 20V
• Floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration up to 600V
• Gate drive outputs: 2A peak source, 2A peak sink
• Independent high-side and low-side channels
• Under-voltage lockout for both channels
• Logic input (IR2103) compatible with standard CMOS or LSTTL outputs
• Matched propagation delay for both channels
• Low side output in phase with input signal
• High side output out of phase with input signal

Technical Specifications:

• Supply Voltage (Vcc): 10V – 20V
• Floating Supply Voltage (Vb): up to 600V
• Logic Supply Voltage (Vss): -5V – 20V
• Output Source Current (Io+): 2A
• Output Sink Current (Io-): 2A
• Gate Drive Output Voltage (Vout): 10V – 20V
• Propagation Delay: 120ns (typical)
• Operating Temperature Range: -40°C to +125°C
• Package: PDIP-8

Applications:

• Motor drive applications
• Induction heating
• UPS systems
• DC-DC converters
• Switch-mode power supplies

Datasheet:
For detailed technical information, please refer to the IR2103PBF Datasheet.