IR2103PBF

IR2103PBF

1,100.00

The IR2103PBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive high-side and low-side N-channel power MOSFETs or IGBTs in a half-bridge configuration. The device features a floating channel designed for bootstrap operation, allowing it to drive the high-side switch up to 600V.

Key Features:

  • Gate drive supply range from 10V to 20V
  • Floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration up to 600V
  • Gate drive outputs: 2A peak source, 2A peak sink
  • Independent high-side and low-side channels
  • Under-voltage lockout for both channels
  • Logic input (IR2103) compatible with standard CMOS or LSTTL outputs
  • Matched propagation delay for both channels
  • Low side output in phase with input signal
  • High side output out of phase with input signal

Technical Specifications:

  • Supply Voltage (Vcc): 10V – 20V
  • Floating Supply Voltage (Vb): up to 600V
  • Logic Supply Voltage (Vss): -5V – 20V
  • Output Source Current (Io+): 2A
  • Output Sink Current (Io-): 2A
  • Gate Drive Output Voltage (Vout): 10V – 20V
  • Propagation Delay: 120ns (typical)
  • Operating Temperature Range: -40°C to +125°C
  • Package: PDIP-8

Applications:

  • Motor drive applications
  • Induction heating
  • UPS systems
  • DC-DC converters
  • Switch-mode power supplies

Datasheet:
For detailed technical information, please refer to the IR2103PBF Datasheet.

In stock

SKU: 2051 Category:

Additional Information

Weight 0.0004 kg
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