FQPF7N65C 7N65 MOSFET

Description: The FQPF7N65C is an N-channel MOSFET designed for high-speed switching applications. It features low on-resistance and can handle high currents, making it suitable for power management in various electronic circuits. The MOSFET operates efficiently with low gate drive voltage, making it ideal for applications requiring fast switching speeds and high efficiency.

Key Features:

• N-channel enhancement-mode power MOSFET
• Low on-resistance for high efficiency
• Fast switching speed
• Low gate drive voltage
• High current handling capability
• Avalanche energy specified
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): 650V
• Continuous Drain Current (I_D): 7A
• Pulsed Drain Current (I_DM): 28A
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 1.6Ω (max) at V_GS = 10V, I_D = 3.5A
• Total Gate Charge (Q_g): 28nC (typical)
• Gate Charge at 10V (Q_gs): 5.6nC (typical)
• Package Type: TO-220F

Applications:

• Switching power supplies
• DC-DC converters
• Motor control circuits
• Electronic ballasts
• Audio amplifiers

Datasheet: For detailed technical information, refer to the FQPF7N65C MOSFET datasheet.