FET IRF9610

Description: The IRF9610 is a P-channel power MOSFET designed for low-power applications where high efficiency and fast switching are required. It operates in enhancement mode and is commonly used in audio amplifiers, power management circuits, and other low-voltage switching applications. The MOSFET offers low on-resistance and can switch high currents with minimal gate drive voltage.

Key Features:

• P-channel enhancement mode power MOSFET
• Low on-resistance for high efficiency
• Fast switching speed
• Low gate drive voltage
• High current handling capability
• Rugged and reliable design
• RoHS compliant

Technical Specifications:

• Drain-Source Voltage (V_DS): -200V
• Continuous Drain Current (I_D): -1.2A
• Pulsed Drain Current (I_DM): -4A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 6Ω (max) at V_GS = -10V, I_D = -500mA
• Total Gate Charge (Q_g): 5nC (typical)
• Gate Charge at -10V (Q_gs): 1.5nC (typical)

Applications:

• Audio amplifiers
• Low-voltage switching circuits
• Power management
• Battery management
• DC-DC converters

Datasheet: For detailed technical information, refer to the IRF9610 P-Channel MOSFET datasheet.