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5N60 FET
₦400.00
Description: The 5N60 is an N-channel power MOSFET designed for high-speed switching applications in power supplies, DC-DC converters, motor control circuits, and other power management applications. It features a low on-resistance and is capable of handling high currents and voltages efficiently. The MOSFET is housed in a TO-220 package, providing good thermal dissipation and ease of mounting.
Key Features:
- N-channel enhancement mode power MOSFET
- Low on-resistance for high efficiency
- Fast switching speed
- High current and voltage ratings
- Rugged and reliable design
- RoHS compliant
Technical Specifications:
- Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 5A (at 25°C)
- Pulsed Drain Current (I_DM): 20A
- Gate-Source Voltage (V_GS): ±30V
- On-Resistance (R_DS(on)): 1.8Ω (max) at V_GS = 10V, I_D = 2.5A
- Total Gate Charge (Q_g): 28nC (typical)
- Gate Charge at 10V (Q_gs): 7.5nC (typical)
Applications:
- Power supplies
- DC-DC converters
- Motor control
- Switching regulators
- Solenoid and relay drivers
Datasheet: For detailed technical information, refer to the FQPF5N60 N-Channel MOSFET datasheet.
In stock
This is an isc N-Channel MOSFET Transistor INCHANG E Semiconductor 5N60 with Drain Current ID= 5A @ TC=25℃, Drain Source Voltage: VDSS= 600V ·
Also, has Fast Switching Speed , Minimum Lot-to-Lot variations for robust device performance and reliable operation
Features and Specifications
- Type Designator: 5N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 5 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 42 nS
- Drain-Source Capacitance (Cd): 55 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm
Applications
- AC Adapter
- Battery Charge
- SMPS
Additional Information
| Weight | 0.00216 kg |
|---|
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