3N80 switching power supply FET

The 3N80 is an N-channel enhancement mode Power MOSFET designed for high-efficiency switching applications in power supplies and converters. With a high voltage rating and low on-resistance, this FET is suitable for use in various power management applications, providing reliable and efficient performance.

Key Features:

• High Voltage Capability: 800V drain-source voltage (V_DS)
• Current Handling: 3A continuous drain current (I_D)
• Low On-Resistance: R_DS(on) of 4.5Ω for efficient switching
• Fast Switching: Quick transition times for improved performance
• Thermal Performance: Robust package for efficient heat dissipation
• Safe Operating Area: Wide range of safe operating conditions

Technical Specifications:

• Drain-Source Voltage (V_DS): 800V
• Continuous Drain Current (I_D): 3A
• Pulsed Drain Current (I_DM): 12A
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 4.5Ω
• Total Gate Charge (Q_g): 27nC
• Gate Threshold Voltage (V_GS(th)): 3V (max)
• Power Dissipation (P_D): 60W
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220
• Weight: 2 grams

Applications:

• Switching power supplies
• DC-DC converters
• Motor control circuits
• High voltage lighting systems
• Industrial power management
• Consumer electronics

Usage:

1. Circuit Integration: Connect the FET in your circuit as per the design requirements, ensuring proper orientation of the gate, drain, and source terminals.
2. Gate Drive: Use an appropriate gate drive voltage (typically 10V to 15V) to fully turn on the MOSFET and achieve low on-resistance.
3. Thermal Management: Implement proper heat sinking or cooling to manage thermal dissipation and maintain optimal performance.
4. Load Control: Utilize the MOSFET to control high voltage loads, ensuring that the current and voltage ratings are within specified limits.
5. Switching: Take advantage of the fast switching characteristics to improve the efficiency of power conversion and control applications.

Caution:

• Ensure the MOSFET is operated within its specified voltage and current limits to avoid damage.
• Handle with care to prevent electrostatic discharge (ESD) damage.
• Implement proper thermal management to avoid overheating.

Datasheet: For more detailed technical information, refer to the 3N80 Datasheet.