2N3055 Gold seal high power triode 15A 100V

2N3055 is a general-purpose power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.

Technical Specification

Medium power transistor

Excellent safe operating area

Complementary NPN – PNP transistors

Low collector-emitter saturation voltage

Pb−free packages are available

DC current gain (hFE) up to 70

With hFe improved linearity

Maximum voltage across collector and emitter: 60V DC

Maximum current allowed trough collector: 15A DC

Maximum voltage across base and emitter: 7V DC

Maximum current allowed through base: 7A DC

Maximum voltage across collector and base: 100V DC

Operating temperature range: -65ºC to +200ºC

Total power dissipation: 115W

Pinout

Base: Pin 1

Emitter: Pin 2

Collector: TAB

Application

Transistor are designed for high switching applications and feature current gain over a wide range of collector current and low leakage current.

Linear amplification and switching.