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18N50 FET
₦2,800.00
Description: The 18N50 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power switching applications. It features low on-state resistance (R_DS(on)) and high current handling capability, making it suitable for use in power supplies, motor control, and other high current switching circuits. This FET operates efficiently with low gate drive requirements, providing reliable performance in various industrial and consumer electronics applications.
Key Features:
- N-channel MOSFET
- Drain-Source Voltage (V_DSS): 500V
- Continuous Drain Current (I_D): 18A
- Low on-state resistance (R_DS(on))
- Fast switching speed
- Low gate drive voltage
- RoHS compliant
Technical Specifications:
- Gate-Source Voltage (V_GS): ±20V
- Total Gate Charge (Q_G): Typically 80nC
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220
Applications:
- Power supplies
- Motor control
- DC-DC converters
- Inverters
- Switching regulators
Datasheet: For detailed technical information, refer to the 18N50 FET Datasheet.
In stock
This is an N-channel enhancement mode power MOSFET that can withstand high energy pulse in avalanche and commutation mode. It also provides minimum on-state resistance and high switching speed.
Technical Specification
Current Rating: 18A
Voltage rating: 500V
RDS(ON) ≤ 0.32 Ω @ VGS=10V, ID=9.0A
Application
It finds application majorly in active power factor correction and highly efficient switched mode power supplies.
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