IRF1405 55V 169A

IRF1405 55V 169A

700.00

The IRF1405 is an N-channel power MOSFET designed for high-current, low-voltage applications. With its high current capacity and low on-resistance, it is ideal for use in power supplies, motor control circuits, and various high-power electronic applications.

Key Features:

  • N-channel enhancement mode MOSFET
  • Extremely high current rating: 169A
  • Low on-resistance for efficient switching
  • Voltage rating: 55V
  • Fast switching capabilities
  • Robust and reliable construction
  • Suitable for high-frequency applications

Technical Specifications:

  • Type: N-channel MOSFET
  • Drain-Source Voltage (Vds): 55V
  • Continuous Drain Current (Id): 169A
  • Pulsed Drain Current (Id, Pulse): 680A
  • Gate-Source Voltage (Vgs): ±20V
  • Rds(on): 0.0047Ω (maximum) at Vgs = 10V
  • Total Gate Charge (Qg): 230nC (typical)
  • Gate-Source Threshold Voltage (Vgs(th)): 2.0V – 4.0V
  • Power Dissipation (Pd): 330W
  • Operating Temperature Range: -55°C to +175°C
  • Package Type: TO-220

Applications:

  • Power supplies (SMPS)
  • Motor control circuits
  • DC-DC converters
  • Inverters and amplifiers
  • Load switches
  • Automotive electronics
  • Power management systems

Usage:

  1. Connect the drain terminal to the load or power supply.
  2. Connect the source terminal to the ground or low-side of the circuit.
  3. Apply a suitable gate voltage (Vgs) to control the switching operation.
  4. Use a gate resistor if needed to manage switching speed and reduce noise.
  5. Ensure proper heat sinking to handle power dissipation and prevent overheating.

Caution:

  • Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD).
  • Verify the voltage and current ratings to ensure compatibility with your circuit.
  • Ensure adequate cooling and heat dissipation to prevent thermal overload.

Datasheet:
For detailed technical specifications, refer to the IRF1405 Datasheet.

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