Subtotal: ₦500.00
2N2905A temperature sensitive sensor
₦2,200.00
Description:
The 2N2905A is a PNP silicon transistor designed for general-purpose switching and amplification applications. While it is not specifically a temperature-sensitive sensor like a dedicated temperature sensor IC, bipolar junction transistors like the 2N2905A can exhibit changes in characteristics such as voltage drop with changes in temperature, which can be utilized in temperature measurement circuits.
Key Features:
- PNP silicon transistor
- Medium power switching and amplifier applications
- High current gain (hFE) typically ranging from 100 to 300
- Low saturation voltage
- Complementary type to the 2N2907A NPN transistor
Technical Specifications:
- Package Type: TO-39
- Maximum Collector-Base Voltage: -60V
- Maximum Collector-Emitter Voltage: -40V
- Maximum Emitter-Base Voltage: -5V
- Continuous Collector Current: -600mA
- Power Dissipation: 625mW
Applications:
- Switching Circuits: Used in general-purpose switching applications.
- Amplification: Amplifies weak signals in various electronic circuits.
- Temperature Measurement: Can be used in temperature-sensitive circuits where changes in base-emitter voltage (Vbe) due to temperature changes are utilized for temperature measurement.
Datasheet:
For detailed technical information, refer to the 2N2905A Datasheet.
Category: Bipolar Junction Transistors
In stock
This is the 2N2905A, an PNP silicon BJT (Bipolar Junction Transistor), this transistor can help in your project by being used to help drive large loads or amplifying or switching applications.
Technical Specification
Polarity: PNP
Power Dissipation: 0.6W
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 60V
Emitter-Base Voltage: 5V
Collector Current: 0.6A
Collector Peak Current: 0.8A
Dc Current Gain: 300
Collector-Emitter Saturation Voltage: 0.4V
Operating Junction Temperature: 175ËšC
Collector Capacitance: 8pF
Pinout
Pin 1: Base
Pin 2: Collector
Pin 3: Emitter
Application
Transistor are designed for high switching applications and feature current gain over a wide range of collector current and low leakage current. It is used in Military applications.
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