This is the 2N2905A, an PNP silicon BJT (Bipolar Junction Transistor), this transistor can help in your project by being used to help drive large loads or amplifying or switching applications.
Technical Specification
Polarity: PNP
Power Dissipation: 0.6W
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 60V
Emitter-Base Voltage: 5V
Collector Current: 0.6A
Collector Peak Current: 0.8A
Dc Current Gain: 300
Collector-Emitter Saturation Voltage: 0.4V
Operating Junction Temperature: 175ËšC
Collector Capacitance: 8pF
Pinout
Pin 1: Base
Pin 2: Collector
Pin 3: Emitter
Application
Transistor are designed for high switching applications and feature current gain over a wide range of collector current and low leakage current. It is used in Military applications.
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