This is the 2N2222A, an NPN silicon BJT (Bipolar Junction Transistor), this transistor can help in your project by being used to help drive large loads or amplifying or switching applications.
Technical Specification
Polarity: NPN
Power Dissipation: 0.5W
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 30V
Emitter-Base Voltage: 5V
Collector Current: 0.8A
Collector-Emitter Saturation Voltage: 0.4V
Operating Junction Temperature: 175˚C
Collector Capacitance: 8pF
Pinout
Pin 1: Emitter
Pin 2: Base
Pin 3: Collector
Application
Transistor are designed for high switching applications and feature current gain over a wide range of collector current and low leakage current.
Linear amplification and switching.